| 描述 | Transistors Switching (Resistor Biased) 100mA Complementary | 典型电阻器比率 | 1 |
|---|---|---|---|
| 安装风格 | SMD/SMT | 封装 / 箱体 | SOT-553-5 |
| 集电极—发射极最大电压 VCEO | 50 V | 集电极连续电流 | 0.1 A |
| 峰值直流集电极电流 | 100 mA | 功率耗散 | 357 mW |
| 最大工作温度 | + 150 C | 封装 | Reel |
| 最小工作温度 | - 55 C |
【ON Semiconductor】NSB1011XV6T5,Transistors Switching (Resistor Biased) 100mA 50V Dual NPN
【ON Semiconductor】NSB1011XV6T5G,Transistors Switching (Resistor Biased) 100mA 50V Dual NPN
【ON Semiconductor】NSB1706DMW5T1,TRANS BRT NPN DUAL 50V SOT353
【ON Semiconductor】NSB1706DMW5T1G,TRANS BRT NPN DUAL 50V SOT353