| 描述 | Transistors Switching (Resistor Biased) 100mA 50V Dual PNP | 典型电阻器比率 | 0.021 |
|---|---|---|---|
| 安装风格 | SMD/SMT | 封装 / 箱体 | SOT-563-6 |
| 集电极—发射极最大电压 VCEO | 50 V | 集电极连续电流 | - 0.1 A |
| 峰值直流集电极电流 | 100 mA | 功率耗散 | 357 mW |
| 最大工作温度 | + 150 C | 封装 | Reel |
| 最小工作温度 | - 55 C | 工厂包装数量 | 8000 |
【ON Semiconductor】NSBA115EDXV6T1,Transistors Switching (Resistor Biased) 100mA 50V Dual PNP
【ON Semiconductor】NSBA115EDXV6T1G,TRANS BRT PNP DUAL 50V SOT-563
【ON Semiconductor】NSBA115EDXV6T5,Transistors Switching (Resistor Biased) 100mA 50V Dual PNP
【ON Semiconductor】NSBA115EDXV6T5G,Transistors Switching (Resistor Biased) 100mA 50V Dual PNP
【ON Semiconductor】NSBA115TDP6T5G,TRANS DUAL PBRT PNP SOT-963
【ON Semiconductor】NSBA115TF3T5G,TRANS DUAL PBRT PNP SOT-1123
【ON Semiconductor】NSBA123EDXV6T1,TRANS BRT PNP DUAL 50V SOT563