| 描述 | Phototransistors IR 900nm Clear Phototransistor | 集电极—射极饱和电压 | 0.5 V |
|---|---|---|---|
| 下降时间 | 15 us | 最大工作温度 | + 80 C |
| 最小工作温度 | - 20 C | 封装 | Bulk |
| 产品 | Photodetector | 上升时间 | 15 us |
| 波长 | 900 nm |
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