| 描述 | Transistors Bipolar (BJT) | 直流集电极/Base Gain hfe Min | 35 at 0.1 mA at 10 V |
|---|---|---|---|
| 配置 | Single | 最大工作温度 | + 150 C |
| 安装风格 | Through Hole | 封装 / 箱体 | TO-92 |
| 封装 | Reel | 最小工作温度 | - 55 C |
| 功率耗散 | 625 mW |
【Fairchild Semiconductor】PN2907_D26Z,Transistors Bipolar (BJT) TO-92
【Fairchild Semiconductor】PN2907_D29Z,Transistors Bipolar (BJT)
【NXP Semiconductors】PN2907A AMO,Transistors Bipolar (BJT) TRANS SW WIDE PITCH
【Central Semiconductor】PN2907A LEADFREE,双极小信号 PNP Gen Pur SW
【NXP Semiconductors】PN2907A T/R,Transistors Bipolar (BJT) PNP SW 600MA 60V
