描述 | Transistors Bipolar (BJT) PNP Transistor General Purpose | 直流集电极/Base Gain hfe Min | 35 at 0.1 mA at 10 V |
---|---|---|---|
配置 | Single | 最大工作温度 | + 150 C |
安装风格 | Through Hole | 封装 / 箱体 | TO-92 |
封装 | Bulk | 集电极连续电流 | 0.8 A |
最小工作温度 | - 55 C | 功率耗散 | 625 mW |
【Fairchild Semiconductor】PN2907TA,TRANS SW PNP 60V 800MA TO-92
【Fairchild Semiconductor】PN2907TAR,TRANS SW PNP 60V 800MA TO-92
【Fairchild Semiconductor】PN2907TF,TRANS SW PNP 60V 800MA TO-92
【Fairchild Semiconductor】PN2907TFR,TRANS SW PNP 60V 800MA TO-92
【Fairchild Semiconductor】PN2907TFR_Q,Transistors Bipolar (BJT) PNP Transistor General Purpose