| 描述 | Transistors Bipolar (BJT) NPN Transistor General Purpose | 直流集电极/Base Gain hfe Min | 100 at 150 mA at 1 V |
|---|---|---|---|
| 配置 | Single | 最大工作温度 | + 150 C |
| 安装风格 | Through Hole | 封装 / 箱体 | TO-92 |
| 封装 | Bulk | 集电极连续电流 | 0.5 A |
| 最小工作温度 | - 55 C | 功率耗散 | 625 mW |
【Fairchild Semiconductor】PN3638,Transistors Bipolar (BJT) PNP Transistor General Purpose
【Fairchild Semiconductor】PN3638_J05Z,TRANS GP PNP 25V 800MA TO-92
【Fairchild Semiconductor】PN3638_Q,Transistors Bipolar (BJT) PNP Transistor General Purpose
【Fairchild Semiconductor】PN3638A,TRANSISTOR AMP PNP SS GP TO-92
【Central Semiconductor】PN3638A LEADFREE,Transistors Bipolar (BJT) PNP Gen Pur SS sistors
【Fairchild Semiconductor】PN3638A_D26Z,TRANS GP PNP 25V 800MA TO-92
【Fairchild Semiconductor】PN3638A_D27Z,TRANS GP PNP 25V 800MA TO-92
【Fairchild Semiconductor】PN3638A_D74Z,TRANS GP PNP 25V 800MA TO-92