| 描述 | Transistors Bipolar (BJT) PNP Transistor General Purpose | 直流集电极/Base Gain hfe Min | 60 at 100 uA at 10 V |
|---|---|---|---|
| 配置 | Single | 最大工作温度 | + 150 C |
| 安装风格 | Through Hole | 封装 / 箱体 | TO-92 |
| 封装 | Bulk | 集电极连续电流 | 0.8 A |
| 最小工作温度 | - 55 C | 功率耗散 | 625 mW |
【Central Semiconductor】PN4356,Transistors Bipolar (BJT) PNP Gen Pur SW
【Fairchild Semiconductor】PN4356_D26Z,Transistors Bipolar (BJT) PNP Transistor General Purpose
【Fairchild Semiconductor】PN4356_D27Z,Transistors Bipolar (BJT)
【Fairchild Semiconductor】PN4356_D74Z,Transistors Bipolar (BJT) PNP Transistor General Purpose
【Fairchild Semiconductor】PN4356_J05Z,Transistors Bipolar (BJT) PNP Transistor General Purpose
【Fairchild Semiconductor】PN4356_Q,Transistors Bipolar (BJT) PNP Transistor General Purpose
