| 描述 | Transistors Bipolar (BJT) PNP Transistor General Purpose | 直流集电极/Base Gain hfe Min | 50 at 1 mA at 10 V |
|---|---|---|---|
| 配置 | Single | 最大工作温度 | + 150 C |
| 安装风格 | Through Hole | 封装 / 箱体 | TO-92 |
| 封装 | Bulk | 集电极连续电流 | 0.45 A |
| 最小工作温度 | - 55 C | 功率耗散 | 625 mW |
【Central Semiconductor】PN5139,Transistors Bipolar (BJT) PNP Gen Pur SW
【Fairchild Semiconductor】PN5179_D26Z,TRANS RF NPN 12V 50MA TO-92
【Fairchild Semiconductor】PN5179_D27Z,TRANS RF NPN 12V 50MA TO-92
【Fairchild Semiconductor】PN5179_D75Z,TRANS RF NPN 12V 50MA TO-92
【Fairchild Semiconductor】PN5179_Q,Transistors Bipolar (BJT) NPN RF Transistor
