描述 | MOSFET | 电阻汲极/源极 RDS(导通) | 0.3 Ohms |
---|---|---|---|
配置 | Single | 最大工作温度 | + 150 C |
安装风格 | Through Hole | 封装 / 箱体 | IPAK |
封装 | Rail | 下降时间 | 20 ns |
最小工作温度 | - 55 C | 功率耗散 | 2.5 W |
上升时间 | 21 ns | 典型关闭延迟时间 | 19 ns |
SFU3008GC1AE1TO-C-GE-1AP-STD,IND USB FLASH DRIVE U-56N 8 GB P
SFU3008GC1AE2TO-C-GE-1A1-STD,IND USB FLASH DRIVE U-50N 8 GB M
SFU3008GC1AE2TO-C-GE-1B1-STD,IND USB FLASH DRIVE U-50N 8 GB M
SFU3008GC1AE2TO-I-GE-1A1-STD,IND USB FLASH DRIVE U-50N 8 GB M
SFU3008GC1AE2TO-I-GE-1B1-STD,IND USB FLASH DRIVE U-50N 8 GB M
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SFU3008GC2AE1TO-C-GE-1BP-STD,INDUSTRIAL USB FLASH DRIVE, U-56