| 描述 | Transistors Bipolar (BJT) PNP Dbl-Dif SI Exptl Plnr | 直流集电极/Base Gain hfe Min | 80 at 50 mA at 1 V |
|---|---|---|---|
| 配置 | Single | 最大工作温度 | + 150 C |
| 安装风格 | Through Hole | 封装 / 箱体 | TO-226 |
| 封装 | Bulk | 集电极连续电流 | 1.2 A |
| 最小工作温度 | - 55 C | 功率耗散 | 1 W |
【Fairchild Semiconductor】TN6729A_D26Z,TRANS GP PNP 80V 1.0A TO-226
【Fairchild Semiconductor】TN6729A_D27Z,TRANS GP PNP 80V 1.0A TO-226
【Fairchild Semiconductor】TN6729A_D75Z,TRANS GP PNP 80V 1.0A TO-226
【Fairchild Semiconductor】TN6729A_J05Z,TRANS GP PNP 80V 1.0A TO-226
【Fairchild Semiconductor】TN6729A_Q,Transistors Bipolar (BJT) PNP Dbl-Dif SI Exptl Plnr
