| 描述 | Transistors Bipolar (BJT) NPN Transistor General Purpose | 直流集电极/Base Gain hfe Min | 100 at 50 mA at 5 V |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 100 MHz |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-92 | 封装 | Bulk |
| 集电极连续电流 | 0.5 A | 最小工作温度 | - 55 C |
| 功率耗散 | 625 mW |
【Central Semiconductor】2N3705,Transistors Bipolar (BJT) NPN 30V 800mA BULK HFE/150
【Central Semiconductor】2N3706,Transistors Bipolar (BJT) NPN 20V 800mA BULK HFE/800
【Central Semiconductor】2N3706 LEADFREE,双极小信号 NPN 20V 800mA BULK HFE/800
【Central Semiconductor】2N3707,Transistors Bipolar (BJT) NPN Gen Pur SS
【Central Semiconductor】2N3708,Transistors Bipolar (BJT) NPN Gen Pur SS
【Central Semiconductor】2N3708 LEADFREE,Transistors Bipolar (BJT) NPN Gen Pur SS sistors