描述 | Transistors Bipolar (BJT) NPN Transistor General Purpose | 直流集电极/Base Gain hfe Min | 120 at 2 mA at 1 V |
---|---|---|---|
配置 | Single | 最大工作频率 | 300 MHz |
最大工作温度 | + 150 C | 安装风格 | Through Hole |
封装 / 箱体 | TO-92 | 封装 | Reel |
集电极连续电流 | 0.2 A | 最小工作温度 | - 55 C |
功率耗散 | 625 mW |
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