| 描述 | Transistors Bipolar (BJT) NPN Si Transistor Epitaxial | 直流集电极/Base Gain hfe Min | 60 at 1 mA at 5 V |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 300 MHz |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-92 | 封装 | Ammo |
| 集电极连续电流 | 0.6 A | 最小工作温度 | - 55 C |
| 功率耗散 | 625 mW |
【Fairchild Semiconductor】2N5550TF,TRANSISTOR NPN 140V 600MA TO-92
【Fairchild Semiconductor】2N5550TFR,TRANSISTOR NPN 140V 600MA TO-92
【NXP Semiconductors】2N5551 T/R,Transistors Bipolar (BJT) TRANS HV TAPE WIDE PITCH
【NXP Semiconductors】2N5551,116,TRANSISTOR NPN 160V 300MA TO-92
【NXP Semiconductors】2N5551,412,TRANSISTOR NPN 160V 300MA TO-92
【Fairchild Semiconductor】2N5551_D10Z,Transistors Bipolar (BJT)