| 描述 | Transistors Bipolar (BJT) Small Signal Transistor | 最大直流电集电极电流 | 0.75 A |
|---|---|---|---|
| 直流集电极/Base Gain hfe Min | 100 at 2 mA at 2 V | 最大工作频率 | 120 MHz |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-92 | 封装 | Box |
| 最小工作温度 | - 65 C | 功率耗散 | 625 mW |
| 工厂包装数量 | 2500 |
【Central Semiconductor】2N5818,Transistors Bipolar (BJT) NPN Gen Pur SS
【Central Semiconductor】2N5819,Transistors Bipolar (BJT) PNP Med Power
【Central Semiconductor】2N5823,Transistors Bipolar (BJT) Small Signal Transistor
【Fairchild Semiconductor】2N5830,IC TRANS NPN SS HV 200MA TO-92
【Fairchild Semiconductor】2N5830_D26Z,AMP GP NPN 100V 200MA TO-92
【Fairchild Semiconductor】2N5830_Q,Transistors Bipolar (BJT) NPN Transistor General Purpose
