| 描述 | Transistors Bipolar (BJT) NPN 30V 100mA HFE/8 | 直流集电极/Base Gain hfe Min | 40 at 10 uA at 5 V |
|---|---|---|---|
| 配置 | Single | 最大工作温度 | + 150 C |
| 安装风格 | Through Hole | 封装 / 箱体 | TO-92 |
| 封装 | Bulk | 集电极连续电流 | 0.1 A |
| 最小工作温度 | - 55 C | 功率耗散 | 350 mW |
【Fairchild Semiconductor】BC183C,TRANSISTOR NPN 30V 100MA TO-92
【Fairchild Semiconductor】BC183C_J35Z,TRANS BIPO GP NPN 30V 100MA TO-9
【Fairchild Semiconductor】BC183C_Q,Transistors Bipolar (BJT) NPN 30V 100mA
【Fairchild Semiconductor】BC183LC,TRANSISTOR NPN 30V 100MA TO-92
【Fairchild Semiconductor】BC183LC_D27Z,TRANSISTOR NPN 30V 100MA TO-92
【Fairchild Semiconductor】BC183LC_J35Z,TRANS BIPO GP NPN 30V 100MA TO-9
【Fairchild Semiconductor】BC183LC_Q,Transistors Bipolar (BJT) NPN 45V 100mA HFE/85