| 描述 | 射频MOSFET电源晶体管 Power LDMOS transistor | 输出功率 | 43 W |
|---|---|---|---|
| 汲极/源极击穿电压 | 65 V | 漏极连续电流 | 36 A |
| 闸/源击穿电压 | 13 V | 最大工作温度 | + 150 C |
| 封装 / 箱体 | SOT-502A | 封装 | Reel |
| 安装风格 | SMD/SMT |
【NXP Semiconductors】BLF7G22L-200,112,TRANSISTOR PWR LDMOS SOT502
【NXP Semiconductors】BLF7G22L-200,118,TRANSISTOR RF PWR LDMOS SOT502
【NXP Semiconductors】BLF7G22LS-100P,112,射频MOSFET电源晶体管 Pwr LDMOS transistor transistor
【NXP Semiconductors】BLF7G22LS-100P,118,射频MOSFET电源晶体管 Pwr LDMOS transistor transistor
【NXP Semiconductors】BLF7G22LS-130,112,TRANSISTOR PWR LDMOS SOT502B
【NXP Semiconductors】BLF7G22LS-130,118,TRANSISTOR PWR LDMOS SOT502B