| 描述 | Transistors Bipolar (BJT) Dual - NPN/NPN Enhanced | 最大直流电集电极电流 | 0.1 A |
|---|---|---|---|
| 直流集电极/Base Gain hfe Min | 300 at 0.1 mA at 5 V | 配置 | Dual |
| 最大工作频率 | 100 MHz | 最大工作温度 | + 150 C |
| 安装风格 | SMD/SMT | 封装 / 箱体 | SOT-563 |
| 封装 | Reel | 集电极连续电流 | 0.45 A |
| 最小工作温度 | - 65 C | 功率耗散 | 350 mW |
| 工厂包装数量 | 3000 |
【Central Semiconductor】CMLT5088E LEADFREE,双极小信号 Dual - NPN/NPN Enhanced
【Central Semiconductor】CMLT5551,Transistors Bipolar (BJT) Dual NPN Small Sgnl High Voltage
【Central Semiconductor】CMLT5551HC,Transistors Bipolar (BJT) Small Signal NPN Hi Volt
【Central Semiconductor】CMLT5551HC LEADFREE,双极电源 Small Signal Dual NPN Hi Volt
【Central Semiconductor】CMLT6427E,Transistors Bipolar (BJT) SMD Small Signal Transistor NPN