| 描述 | 双极小信号 NPN Enhanced Complimentary | 封装 / 箱体 | SOT-23 |
|---|---|---|---|
| 集电极—发射极最大电压 VCEO | 40 V | 发射极 - 基极电压 VEBO | 6 V |
| 最大直流电集电极电流 | 0.2 A | 功率耗散 | 350 mW |
| 最大工作频率 | 300 MHz | 最大工作温度 | + 150 C |
| 封装 | Reel | DC Collector/Base Gain hfe Min | 60 |
| 最小工作温度 | - 65 C | Standard Pack Qty | 3000.0 |
【Central Semiconductor】CMPT3904G,Transistors Bipolar (BJT) NPN Gen Purpose
【Central Semiconductor】CMPT3906E,Transistors Bipolar (BJT) PNP Enhanced Complimentary
【Central Semiconductor】CMPT3906GTR,Transistors Bipolar (BJT) PNP Gen Purpose Halogen Free
【Central Semiconductor】CMPT3906TR,Transistors Bipolar (BJT) PNP Gen Purpose
【Central Semiconductor】CMPT3906TR LEADFREE,双极小信号 PNP Gen Purpose