| 描述 | Transistors Bipolar (BJT) NPN Enhanced Complimentary | 最大直流电集电极电流 | 0.2 A |
|---|---|---|---|
| 直流集电极/Base Gain hfe Min | 60 | 配置 | Single |
| 最大工作频率 | 300 MHz | 最大工作温度 | + 150 C |
| 安装风格 | SMD/SMT | 封装 / 箱体 | SOT-23 |
| 封装 | Reel | 最小工作温度 | - 65 C |
| 功率耗散 | 350 mW | 工厂包装数量 | 3000 |
【Central Semiconductor】CMPT3904E LEADFREE,双极小信号 NPN Enhanced Complimentary
【Central Semiconductor】CMPT3904G,Transistors Bipolar (BJT) NPN Gen Purpose
【Central Semiconductor】CMPT3906E,Transistors Bipolar (BJT) PNP Enhanced Complimentary
【Central Semiconductor】CMPT3906GTR,Transistors Bipolar (BJT) PNP Gen Purpose Halogen Free
【Central Semiconductor】CMPT3906TR,Transistors Bipolar (BJT) PNP Gen Purpose