| 描述 | Transistors Switching (Resistor Biased) 50V/100mA/22K 47K | 典型电阻器比率 | 0.47 |
|---|---|---|---|
| 安装风格 | Through Hole | 封装 / 箱体 | TO-92-3 |
| 集电极—发射极最大电压 VCEO | 50 V | 集电极连续电流 | 0.1 A |
| 峰值直流集电极电流 | 100 mA | 功率耗散 | 0.3 W |
| 最大工作温度 | + 150 C | 封装 | Bulk |
| 发射极 - 基极电压 VEBO | 10 V | 最小工作温度 | - 55 C |
【Fairchild Semiconductor】FJN3307RTA,TRANSISTOR NPN 50V 100MA TO-92
【Fairchild Semiconductor】FJN3308RBU,TRANSISTOR NPN 50V 100MA TO-92
【Fairchild Semiconductor】FJN3308RBU_Q,Transistors Switching (Resistor Biased) 50V/100mA/47K 22K
【Fairchild Semiconductor】FJN3308RTA,TRANSISTOR NPN 50V 100MA TO-92
【Fairchild Semiconductor】FJN3309RBU,TRANSISTOR NPN 40V 100MA TO-92
【Fairchild Semiconductor】FJN3309RBU_Q,Transistors Switching (Resistor Biased) NPN/40V/100mA/4.7K
【Fairchild Semiconductor】FJN3309RTA,TRANSISTOR NPN 40V 100MA TO-92
【Fairchild Semiconductor】FJN3310RBU,TRANSISTOR NPN 40V 100MA TO-92