| 描述 | Transistors Bipolar (BJT) NPN Si Transistor Epitaxial | 直流集电极/Base Gain hfe Min | 40 |
|---|---|---|---|
| 配置 | Single | 最大工作温度 | + 150 C |
| 安装风格 | SMD/SMT | 封装 / 箱体 | SOT-223 |
| 封装 | Reel | 集电极连续电流 | 0.3 A |
| 最小工作温度 | - 55 C | 功率耗散 | 2 W |
【Fairchild Semiconductor】FJU1615,Transistors Switching (Resistor Biased)
【Fairchild Semiconductor】FJU1615TU,Transistors Bipolar (BJT)
【Fairchild Semiconductor】FJU5304DTU,Transistors Bipolar (BJT) NPN/ 500V
【Fairchild Semiconductor】FJV1845EMTF,TRANSISTOR NPN 120V 50MA SOT-23
【Fairchild Semiconductor】FJV1845EMTF_Q,Transistors Bipolar (BJT) NPN Epitaxial Transistor
【Fairchild Semiconductor】FJV1845FMTF,TRANSISTOR NPN 120V 50MA SOT-23
【Fairchild Semiconductor】FJV1845FMTF_Q,Transistors Bipolar (BJT) NPN Epitaxial Transistor