描述 | Transistors Switching (Resistor Biased) 50V/100mA/10K 47K | 典型电阻器比率 | 0.21 |
---|---|---|---|
安装风格 | SMD/SMT | 封装 / 箱体 | SOT-23-3 |
集电极—发射极最大电压 VCEO | 50 V | 集电极连续电流 | 0.1 A |
峰值直流集电极电流 | 100 mA | 功率耗散 | 0.2 W |
最大工作温度 | + 150 C | 封装 | Reel |
发射极 - 基极电压 VEBO | 10 V | 最小工作温度 | - 55 C |
【Fairchild Semiconductor】FJV3107RMTF,TRANSISTOR NPN 50V 100MA SOT-23
【Fairchild Semiconductor】FJV3107RMTF_Q,Transistors Switching (Resistor Biased) 50V/100mA/22K 47K
【Fairchild Semiconductor】FJV3108RMTF,TRANSISTOR NPN 50V 100MA SOT-23
【Fairchild Semiconductor】FJV3108RMTF_Q,Transistors Switching (Resistor Biased) 50V/100mA/47K 22K
【Fairchild Semiconductor】FJV3109RMTF,TRANSISTOR NPN 40V 100MA SOT-23
【Fairchild Semiconductor】FJV3110RMTF,TRANSISTOR NPN 40V 100MA SOT-23
【Fairchild Semiconductor】FJV3111RMTF,TRANSISTOR NPN 40V 100MA SOT-23
【Fairchild Semiconductor】FJV3111RMTF_Q,Transistors Switching (Resistor Biased) NPN/40V/100mA/22K