| 描述 | Transistors Bipolar (BJT) NPN Transistor Low Saturation | 直流集电极/Base Gain hfe Min | 250 at 100 mA at 2 V |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 100 MHz |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-226 | 封装 | Bulk |
| 集电极连续电流 | 3 A | 最小工作温度 | - 55 C |
| 功率耗散 | 1 W |
【Fairchild Semiconductor】FPN430,TRANSISTOR PNP 30V 2A TO-226
【Fairchild Semiconductor】FPN430_Q,Transistors Bipolar (BJT) PNP Transistor Low Saturation
【Fairchild Semiconductor】FPN430A,TRANSISTOR PNP 30V 2A TO-226
【Fairchild Semiconductor】FPN430A_Q,Transistors Bipolar (BJT) PNP Transistor Low Saturation
【Fairchild Semiconductor】FPN530,TRANSISTOR NPN 30V 3A TO-226
【Fairchild Semiconductor】FPN530_Q,Transistors Bipolar (BJT) NPN Transistor Low Saturation
【Fairchild Semiconductor】FPN530A,TRANSISTOR NPN 30V 3A TO-226
【Fairchild Semiconductor】FPN530A_Q,Transistors Bipolar (BJT) NPN Transistor Low Saturation