| 描述 | Transistors Bipolar (BJT) PNP Transistor Low Saturation | 直流集电极/Base Gain hfe Min | 70 at 100 mA at 2 V |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 75 MHz |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-226 | 封装 | Bulk |
| 集电极连续电流 | 3 A | 最小工作温度 | - 55 C |
| 功率耗散 | 1 W |
【Fairchild Semiconductor】FPN660A,TRANSISTOR PNP 60V 3A TO-226
【Fairchild Semiconductor】FPN660A_D26Z,TRANSISTOR PNP 60V 3A TO-226
【Fairchild Semiconductor】FPN660A_D27Z,TRANSISTOR PNP 60V 3A TO-226
【Fairchild Semiconductor】FPN660A_D75Z,TRANSISTOR PNP 60V 3A TO-226
【Fairchild Semiconductor】FPN660A_Q,Transistors Bipolar (BJT) PNP Transistor Low Saturation
【Fairchild Semiconductor】FPNH10,TRANSISTOR RF NPN 25V 50MA TO-92
【Fairchild Semiconductor】FPNH10_Q,Transistors Bipolar (BJT) NPN/ 25V/ 50mA