| 描述 | Transistors Bipolar (BJT) NPN Transistor Low Saturation | 直流集电极/Base Gain hfe Min | 70 at 50 mA at 2 V |
|---|---|---|---|
| 配置 | Single | 最大工作温度 | + 150 C |
| 安装风格 | SMD/SMT | 封装 / 箱体 | SSOT-3 |
| 封装 | Reel | 集电极连续电流 | 3 A |
| 最小工作温度 | - 55 C | 功率耗散 | 0.5 W |
【Fairchild Semiconductor】FSB660,TRANSISTOR PNP 60V 2A SSOT-3
【Fairchild Semiconductor】FSB660_Q,Transistors Bipolar (BJT) PNP Transistor Low Saturation
【Fairchild Semiconductor】FSB660A,TRANSISTOR PNP 60V 2A SSOT-3
【Fairchild Semiconductor】FSB660A_Q,Transistors Bipolar (BJT) PNP Transistor Low Saturation
【Fairchild Semiconductor】FSB6726,TRANSISTOR PNP 30V 1.5A SSOT-3
【Fairchild Semiconductor】FSB6726_Q,Transistors Bipolar (BJT) PNP Transistor General Purpose