描述 | IGBT ESD N-CHAN 360V TO-262AA | 电压 - 集电极发射极击穿(最大) | 395V |
---|---|---|---|
Vge, Ic时的最大Vce(开) | 1.9V @ 5V,20A | 电流 - 集电极 (Ic)(最大) | 37.7A |
功率 - 最大 | 150W | 输入类型 | 逻辑 |
安装类型 | 通孔 | 封装/外壳 | TO-262-3,长引线,I?Pak,TO-262AA |
供应商设备封装 | TO-262AA | 包装 | 管件 |
【Fairchild Semiconductor】HGT1S20N36G3VLS,IGBT 晶体管 20A 360V Clamp
【Fairchild Semiconductor】HGT1S20N60A4S9A,IGBT SMPS N-CHAN 600V TO-263AB
【Fairchild Semiconductor】HGT1S20N60C3S9A,IGBT UFS N-CHAN 600V TO-263AB
【Fairchild Semiconductor】HGT1S2N120CN,IGBT NPT N-CH 1200V 13A I2PAK
【Fairchild Semiconductor】HGT1S3N60A4DS9A,IGBT SMPS N-CH 600V D2PAK
【Fairchild Semiconductor】HGT1S7N60A4DS,IGBT SMPS N-CHAN 600V TO-263AB
【Fairchild Semiconductor】HGT1S7N60A4S9A,IGBT 晶体管 600V N-Channel IGBT SMPS Series