| 描述 | IGBT 晶体管 600V N-Ch IGBT SMPS Series HF | 栅极/发射极最大电压 | +/- 20 V |
|---|---|---|---|
| 在25 C的连续集电极电流 | 34 A | 栅极—射极漏泄电流 | +/- 250 nA |
| 功率耗散 | 125 W | 最大工作温度 | + 150 C |
| 封装 / 箱体 | TO-247-3 | 封装 | Tube |
| 集电极最大连续电流 Ic | 34 A | 最小工作温度 | - 55 C |
| 安装风格 | Through Hole |
【Fairchild Semiconductor】HGTP10N120BN,IGBT NPT N-CH 1200V 35A TO-220AB
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【Fairchild Semiconductor】HGTP12N60A4D,IGBT N-CH SMPS 600V 54A TO220AB
【Fairchild Semiconductor】HGTP12N60C3,IGBT SMPS N-CH 600V 24A TO-220AB
【Fairchild Semiconductor】HGTP12N60C3D,IGBT SMPS N-CH 600V 24A TO-220AB
【Fairchild Semiconductor】HGTP14N36G3VL,IGBT 晶体管 14a 380V Logic Level
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【Fairchild Semiconductor】HGTP14N40F3VL,IGBT 晶体管 400V/14A/TF<1.2US