| 描述 | Transistors Bipolar (BJT) Vceo=-50V Vds=20V Ic=-100mA Id=50mA |
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HN7G03FU-B(TE85L,F,Transistors Bipolar (BJT) Vceo=-12V Vds=20V Ic=-400mA Id=100mA
HN7G04FU-A(TE85L,F,Transistors Bipolar (BJT) Vceo=-12V Vceo=50V 10K x 47Kohms
HN7G05FU(TE85L,F),Transistors Bipolar (BJT) Vceo=-50V Vds=20V Ic=-100ma Id=50mA
HN7G06FE-A(TE85L,F,Transistors Bipolar (BJT) Vceo=-12V Vceo=50V Ic=-400mA IC=100mA
HN7G06FU-A(TE85L,F,Transistors Bipolar (BJT) Vceo=-12V Vceo=50V 47K x 47Kohms
HN7G08FE-A(TE85L,F,Transistors Bipolar (BJT) Vceo=-12V Vceo=50V Ic=-400mA IC=100mA
HN7G09FE(TE85L,F),Transistors Bipolar (BJT) Vceo=50V Vds=30V Ic=100mA Id=100mA