| 描述 | Transistors Bipolar (BJT) PNP Epitaxial Transistor | 直流集电极/Base Gain hfe Min | 120 at 2 mA at 6 V |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 80 MHz |
| 最大工作温度 | + 125 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-92 | 封装 | Ammo |
| 集电极连续电流 | - 0.15 A | 最小工作温度 | - 65 C |
| 功率耗散 | 0.4 W |
【Fairchild Semiconductor】KSA1142OSTU,TRANSISTOR PNP 180V 0.1A TO-126
【Fairchild Semiconductor】KSA1142YSTU,TRANSISTOR PNP 180V 0.1A TO-126
【Fairchild Semiconductor】KSA1150OBU,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSA1150OTA,TRANSISTOR PNP 20V 0.5A TO-92S
【Fairchild Semiconductor】KSA1150OTA_Q,Transistors Bipolar (BJT) PNP Epitaxial Transistor
【Fairchild Semiconductor】KSA1150YBU,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSA1150YTA,TRANSISTOR PNP 20V 0.5A TO-92S
【Fairchild Semiconductor】KSA1150YTA_Q,Transistors Bipolar (BJT) PNP Epitaxial Transistor