| 描述 | Transistors Bipolar (BJT) PNP Epitaxial Transistor | 直流集电极/Base Gain hfe Min | 120 at 100 mA at 1 V |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 160 MHz |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-92S | 封装 | Ammo |
| 集电极连续电流 | - 0.7 A | 最小工作温度 | - 55 C |
| 功率耗散 | 350 mW |
【Fairchild Semiconductor】KSB811GBU,TRANSISTOR PNP 25V 1A TO-92S
【Fairchild Semiconductor】KSB811GTA,TRANSISTOR PNP 25V 1A TO-92S
【Fairchild Semiconductor】KSB811GTA_Q,Transistors Bipolar (BJT) PNP Epitaxial Transistor
【Fairchild Semiconductor】KSB811OBU,TRANSISTOR PNP 25V 1A TO-92S
【Fairchild Semiconductor】KSB811OTA,TRANSISTOR PNP 25V 1A TO-92S
【Fairchild Semiconductor】KSB811OTA_Q,Transistors Bipolar (BJT) PNP Epitaxial Transistor
【Fairchild Semiconductor】KSB811YBU,TRANSISTOR PNP 25V 1A TO-92S
【Fairchild Semiconductor】KSB811YTA,TRANSISTOR PNP 25V 1A TO-92S