| 描述 | Transistors Bipolar (BJT) NPN Epitaxial Transistor | 直流集电极/Base Gain hfe Min | 70 at 10 mA at 5 V |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 100 MHz |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-92L | 封装 | Ammo |
| 集电极连续电流 | 0.8 A | 最小工作温度 | - 55 C |
| 功率耗散 | 0.9 W |
【Fairchild Semiconductor】KSC2310RBU,TRANSISTOR NPN 150V 50MA TO-92L
【Fairchild Semiconductor】KSC2310RNBU,Transistors Bipolar (BJT) DISC BY MFG 3/05
【Fairchild Semiconductor】KSC2310RTA,TRANSISTOR NPN 150V 50MA TO-92L
【Fairchild Semiconductor】KSC2310RTA_Q,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSC2310YBU,TRANSISTOR NPN 150V 50MA TO-92L
【Fairchild Semiconductor】KSC2310YNBU,TRANSISTOR NPN 150V 50MA TO-92L
【Fairchild Semiconductor】KSC2310YTA,TRANSISTOR NPN 150V 50MA TO-92L
【Fairchild Semiconductor】KSC2310YTA_Q,Transistors Bipolar (BJT) NPN Epitaxial Transistor