| 描述 | Transistors Bipolar (BJT) NPN Epitaxial Transistor | 直流集电极/Base Gain hfe Min | 120 at 100 mA at 1 V |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 170 MHz |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-92S | 封装 | Ammo |
| 最小工作温度 | - 55 C | 功率耗散 | 350 mW |
【Fairchild Semiconductor】KSD1021GBU,TRANSISTOR NPN 30V 1A TO-92S
【Fairchild Semiconductor】KSD1021GTA,TRANSISTOR NPN 30V 1A TO-92S
【Fairchild Semiconductor】KSD1021GTA_Q,Transistors Bipolar (BJT) NPN Epitaxial Transistor
【Fairchild Semiconductor】KSD1021OBU,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSD1021OTA,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSD1021YBU,TRANSISTOR NPN 30V 1A TO-92S
【Fairchild Semiconductor】KSD1021YTA,TRANSISTOR NPN 30V 1A TO-92S
【Fairchild Semiconductor】KSD1047OTU,Transistors Bipolar (BJT)