| 描述 | Transistors Bipolar (BJT) NPN Si Transistor | 直流集电极/Base Gain hfe Min | 10 |
|---|---|---|---|
| 最大工作频率 | 4 MHz | 最大工作温度 | + 150 C |
| 安装风格 | Through Hole | 封装 / 箱体 | TO-220 |
| 封装 | Tube | 集电极连续电流 | 1.5 A |
| 功率耗散 | 75000 mW |
【Fairchild Semiconductor】KSE13006TU,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSE13007FH1SMTU,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSE13007FH2SMTU,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSE13007FSM,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSE13007FSMTU,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSE13007H1SM,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSE13007H1SMTU,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSE13007H2SM,Transistors Bipolar (BJT)