| 描述 | Transistors Bipolar (BJT) | 直流集电极/Base Gain hfe Min | 8 |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 4 MHz |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-220F | 封装 | Tube |
| 最小工作温度 | - 65 C | 功率耗散 | 40000 mW |
【Fairchild Semiconductor】KSE13007H1SM,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSE13007H1SMTU,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSE13007H2SM,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSE13007H2SMTU,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSE13007SM,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSE13007SMTU,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSE13008TU,Transistors Bipolar (BJT)