| 描述 | Transistors Bipolar (BJT) NPN Si Transistor Epitaxial | 直流集电极/Base Gain hfe Min | 60 |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 650 MHz |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-92 | 封装 | Ammo |
| 最小工作温度 | - 55 C | 功率耗散 | 350 mW |
【Fairchild Semiconductor】KSP12BU,TRANSISTOR DARL NPN 20V TO-92
【Fairchild Semiconductor】KSP12BU_Q,Transistors Darlington NPN Si Transistor Epitaxial Darlington
【Fairchild Semiconductor】KSP12TA,TRANSISTOR DARL NPN 20V TO-92
【Rectron】KSP13,Transistors Darlington TO92,NPN,0.5A,30V Darlington
【Fairchild Semiconductor】KSP13BU,TRANS DARL NPN 30V 500MA TO-92
【Fairchild Semiconductor】KSP13BU_Q,Transistors Darlington NPN Si Transistor Epitaxial Darlington
【Fairchild Semiconductor】KSP13TA,TRANS DARL NPN 30V 500MA TO-92