| 描述 | Transistors Darlington PNP Si Transistor Epitaxial Darlington | 集电极—基极电压 VCBO | 30 V |
|---|---|---|---|
| 最大直流电集电极电流 | 0.5 A | 最大集电极截止电流 | 0.1 uA |
| 功率耗散 | 625 mW | 最大工作温度 | + 150 C |
| 安装风格 | Through Hole | 封装 / 箱体 | TO-92 |
| 封装 | Bulk | 集电极连续电流 | - 0.5 A |
| 直流集电极/Base Gain hfe Min | 10000 |
【Fairchild Semiconductor】KSP64TA,TRANS DARL PNP 30V 500MA TO-92
【Fairchild Semiconductor】KSP6520BU,TRANSISTOR NPN 25V 100MA TO-92
【Fairchild Semiconductor】KSP6520BU_Q,Transistors Bipolar (BJT) NPN/25V/100mA
【Fairchild Semiconductor】KSP6521BU,TRANSISTOR NPN 25V 100MA TO-92
【Fairchild Semiconductor】KSP6521BU_Q,Transistors Bipolar (BJT) NPN/40V/100mA
【Fairchild Semiconductor】KSP6521NBU,TRANSISTOR NPN 25V 100MA TO-92
【Fairchild Semiconductor】KSP75BU,TRANS DARL PNP 40V 500MA TO-92
【Fairchild Semiconductor】KSP75BU_Q,Transistors Darlington PNP Si Transistor Epitaxial Darlington