描述 | Transistors Bipolar (BJT) PNP Si Transistor Epitaxial | 直流集电极/Base Gain hfe Min | 100 at 1 mA at 5 V |
---|---|---|---|
配置 | Single | 最大工作频率 | 150 MHz |
最大工作温度 | + 150 C | 安装风格 | Through Hole |
封装 / 箱体 | TO-92 | 封装 | Ammo |
集电极连续电流 | - 0.5 A | 最小工作温度 | - 55 C |
功率耗散 | 625 mW |
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