描述 | Transistors Bipolar (BJT) NPN Si Transistor Epitaxial | 直流集电极/Base Gain hfe Min | 20 at 0.1 mA at 1 V |
---|---|---|---|
配置 | Single | 最大工作频率 | 250 MHz |
最大工作温度 | + 150 C | 安装风格 | SMD/SMT |
封装 / 箱体 | SOT-23 | 封装 | Reel |
集电极连续电流 | - 0.6 A | 功率耗散 | 350 mW |
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