| 描述 | Transistors Bipolar (BJT) NPN Transistor General Purpose | 直流集电极/Base Gain hfe Min | 35 at 0.1 mA at 10 V |
|---|---|---|---|
| 配置 | Single | 最大工作温度 | + 150 C |
| 安装风格 | SMD/SMT | 封装 / 箱体 | SOT-523 |
| 封装 | Reel | 集电极连续电流 | 0.6 A |
| 最小工作温度 | - 55 C | 功率耗散 | 150 mW |
【Fairchild Semiconductor】MMBT2222A,TRANSISTOR GP NPN AMP SOT-23
【Fairchild Semiconductor】MMBT2222A_D87Z,TRANS NPN 40V 600MA SOT-523F
【Fairchild Semiconductor】MMBT2222A_L99Z,Transistors Bipolar (BJT) NPN Transistor General Purpose
【Fairchild Semiconductor】MMBT2222A_Q,Transistors Bipolar (BJT) NPN Gen Purpose
