| 描述 | Transistors Bipolar (BJT) PNP Transistor General Purpose | 直流集电极/Base Gain hfe Min | 60 at 100 uA at 10 V |
|---|---|---|---|
| 配置 | Single | 最大工作温度 | + 150 C |
| 安装风格 | SMD/SMT | 封装 / 箱体 | SOT-23 |
| 封装 | Reel | 最小工作温度 | - 55 C |
| 功率耗散 | 350 mW |
【Fairchild Semiconductor】MMBT4400_Q,Transistors Bipolar (BJT) NPN Transistor General Purpose
【Fairchild Semiconductor】MMBT4401,TRANSISTOR GP NPN AMP SOT-23
【Fairchild Semiconductor】MMBT4401_D87Z,TRANS GP NPN 40V 600MA SOT-23
【Fairchild Semiconductor】MMBT4401_Q,Transistors Bipolar (BJT) SOT-23 NPN GEN PUR
