| 描述 | Transistors Bipolar (BJT) NPN General Purpose Transistor | 直流集电极/Base Gain hfe Min | 50 at 500 mA at 10 V |
|---|---|---|---|
| 配置 | Single | 最大工作温度 | + 150 C |
| 安装风格 | Through Hole | 封装 / 箱体 | TO-92 |
| 封装 | Ammo | 集电极连续电流 | 0.8 A |
| 最小工作温度 | - 55 C | 功率耗散 | 625 mW |
【Fairchild Semiconductor】MPS6531_Q,Transistors Bipolar (BJT) NPN Transistor General Purpose
【ROHM Semiconductor】MPS6531T93,Transistors Bipolar (BJT) NPN
【Central Semiconductor】MPS6532,Transistors Bipolar (BJT) NPN Gen Pur SS
【Fairchild Semiconductor】MPS6534,TRANSISTOR PNP GEN PURP TO-92
【Fairchild Semiconductor】MPS6534_D26Z,TRANS GP PNP 40V 800MA TO-92
【Fairchild Semiconductor】MPS6534_D75Z,TRANS GP PNP 40V 800MA TO-92
【Fairchild Semiconductor】MPS6534_Q,Transistors Bipolar (BJT) PNP Transistor General Purpose
【ROHM Semiconductor】MPS6534T93,Transistors Bipolar (BJT) PNP