| 描述 | IC DRAM 16MBIT 60NS 26TSOP | 存储器类型 | DRAM |
|---|---|---|---|
| 存储容量 | 16M (4M x 4) | 速度 | 60ns |
| 接口 | 串行 | 电源电压 | 3 V ~ 3.6 V |
| 工作温度 | 0°C ~ 70°C | 封装/外壳 | * |
| 供应商设备封装 | * | 包装 | * |
【ROHM Semiconductor】MSM51V17405F-60T3DK,IC DRAM 16MBIT 60NS 26TSOP
【ROHM Semiconductor】MSM51V17405F-60T3-K7,IC DRAM 16MBIT 60NS 26TSOP
【ROHM Semiconductor】MSM51V18160F-60T3-K7,IC DRAM 16MBIT 60NS 50TSOP
【ROHM Semiconductor】MSM51V18165F-60J3-7,IC DRAM 16MBIT 60NS 42SOJ
【ROHM Semiconductor】MSM51V18165F-60T3KMT,IC DRAM 16MBIT 60NS 50TSOP