| 描述 | Transistors Switching (Resistor Biased) 100mA 50V BRT PNP | 典型电阻器比率 | 1 |
|---|---|---|---|
| 安装风格 | SMD/SMT | 封装 / 箱体 | SC-59-3 |
| 集电极—发射极最大电压 VCEO | 50 V | 集电极连续电流 | 0.1 A |
| 峰值直流集电极电流 | 100 mA | 功率耗散 | 230 mW |
| 最大工作温度 | + 150 C | 封装 | Reel |
| 最小工作温度 | - 55 C | 工厂包装数量 | 3000 |
【ON Semiconductor】MUN2113T1,Transistors Switching (Resistor Biased) 100mA 50V BRT PNP
【ON Semiconductor】MUN2114T1,Transistors Switching (Resistor Biased) 100mA 50V BRT PNP
【ON Semiconductor】MUN2115T1,Transistors Switching (Resistor Biased) 100mA 50V BRT PNP
【ON Semiconductor】MUN2116T1,Transistors Switching (Resistor Biased) 100mA 50V BRT PNP