| 描述 | Transistors Switching (Resistor Biased) 100mA Complementary | 典型电阻器比率 | 0.21 |
|---|---|---|---|
| 安装风格 | SMD/SMT | 封装 / 箱体 | SOT-563-6 |
| 集电极—发射极最大电压 VCEO | 50 V | 集电极连续电流 | 0.1 A |
| 峰值直流集电极电流 | 100 mA | 功率耗散 | 357 mW |
| 最大工作温度 | + 150 C | 封装 | Reel |
| 最小工作温度 | - 55 C |
【ON Semiconductor】NSBC114YPDXV6T5G,TRANS BRT DUAL COMPL 50V SOT-563
【ON Semiconductor】NSBC115EDXV6T1,Transistors Switching (Resistor Biased) 100mA 50V Dual NPN
【ON Semiconductor】NSBC115EDXV6T1G,TRANS BRT DUAL COMPL 50V SOT-563
【ON Semiconductor】NSBC115EDXV6T5,Transistors Switching (Resistor Biased) 100mA 50V Dual NPN
【ON Semiconductor】NSBC115EDXV6T5G,Transistors Switching (Resistor Biased) 100mA 50V Dual NPN
【ON Semiconductor】NSBC115TDP6T5G,TRANS ARR 2NPN W/RES 50V SOT963
