| 描述 | 光电晶体管 IR 900nm Clear Phototransistor | 集电极—发射极最大电压 VCEO | 30 V |
|---|---|---|---|
| 集电极—射极饱和电压 | 0.5 V | 下降时间 | 15 us |
| 最大工作温度 | + 80 C | 最小工作温度 | - 20 C |
| 封装 | Bulk | 产品 | Photodetector |
| 上升时间 | 15 us | 波长 | 900 nm |
【Lumex】OED-ST-1556SN,Phototransistors IR 900nm Clear Phototransistor
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