描述 | Transistors Bipolar (BJT) | 直流集电极/Base Gain hfe Min | 100 |
---|---|---|---|
配置 | Single | 最大工作温度 | + 150 C |
安装风格 | Through Hole | 封装 / 箱体 | TO-92 |
封装 | Bulk | 集电极连续电流 | 0.5 A |
最小工作温度 | - 55 C | 功率耗散 | 625 mW |
工厂包装数量 | 3000 |
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