| 描述 | Transistors Bipolar (BJT) PNP Gen Purp Amp | 最大直流电集电极电流 | 0.8 A |
|---|---|---|---|
| 直流集电极/Base Gain hfe Min | 100 | 配置 | Single |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-92 Kinked Lead | 封装 | Ammo |
| 集电极连续电流 | 0.8 A | 最小工作温度 | - 55 C |
| 功率耗散 | 625 mW | 工厂包装数量 | 2000 |
【Fairchild Semiconductor】PN4355_Q,Transistors Bipolar (BJT) PNP Transistor General Purpose
【Central Semiconductor】PN4356,Transistors Bipolar (BJT) PNP Gen Pur SW
【Fairchild Semiconductor】PN4356_D26Z,Transistors Bipolar (BJT) PNP Transistor General Purpose
【Fairchild Semiconductor】PN4356_D27Z,Transistors Bipolar (BJT)
【Fairchild Semiconductor】PN4356_D74Z,Transistors Bipolar (BJT) PNP Transistor General Purpose
【Fairchild Semiconductor】PN4356_J05Z,Transistors Bipolar (BJT) PNP Transistor General Purpose
【Fairchild Semiconductor】PN4356_Q,Transistors Bipolar (BJT) PNP Transistor General Purpose