| 描述 | Transistors Bipolar (BJT) NPN Dbl-Dif 60V SI Exptl Plnr | 直流集电极/Base Gain hfe Min | 40 at 50 mA at 2 V |
|---|---|---|---|
| 配置 | Single | 最大工作温度 | + 150 C |
| 安装风格 | Through Hole | 封装 / 箱体 | TO-226 |
| 封装 | Bulk | 集电极连续电流 | 1.5 A |
| 最小工作温度 | - 55 C | 功率耗散 | 1 W |
【Fairchild Semiconductor】TN6707A_Q,Transistors Bipolar (BJT) 80V NPN Center Collector
【Fairchild Semiconductor】TN6714A_D26Z,TRANS BIPO GPA NPN 30V 2A TO-226
【Fairchild Semiconductor】TN6714A_D27Z,TRANS BIPO GPA NPN 30V 2A TO-226
【Fairchild Semiconductor】TN6714A_Q,Transistors Bipolar (BJT) NPN Dbl-Dif SI Exptl Plnr
【Fairchild Semiconductor】TN6715A,TRANS GP NPN 40V 1.5A TO-226
【Fairchild Semiconductor】TN6715A_D74Z,TRANS BIPO GP NPN 40V 1.5A TO-22