| 描述 | Transistors Bipolar (BJT) NPN Dbl-Dif SI Exptl Plnr | 直流集电极/Base Gain hfe Min | 55 at 10 mA at 1 V |
|---|---|---|---|
| 配置 | Single | 最大工作温度 | + 150 C |
| 安装风格 | Through Hole | 封装 / 箱体 | TO-226 |
| 封装 | Bulk | 集电极连续电流 | 1.5 A |
| 最小工作温度 | - 55 C | 功率耗散 | 1 W |
【Fairchild Semiconductor】TN6716A_Q,Transistors Bipolar (BJT) NPN Bipolar
【Fairchild Semiconductor】TN6717A,TRANS GP NPN 80V 1.2A TO-226
【Fairchild Semiconductor】TN6717A_D29Z,Transistors Bipolar (BJT) NPN Dbl-Dif SI Exptl Plnr
【Fairchild Semiconductor】TN6717A_Q,Transistors Bipolar (BJT) NPN Dbl-Dif SI Exptl Plnr
【Fairchild Semiconductor】TN6718A_D74Z,TRANS BIPO GPA NPN 100V 1.2A TO-
【Fairchild Semiconductor】TN6718A_Q,Transistors Bipolar (BJT) NPN BIPOLAR TO-226