描述 | Transistors Switching (Resistor Biased) 200MW 10KW 10KW | 典型电阻器比率 | 1 |
---|---|---|---|
安装风格 | SMD/SMT | 封装 / 箱体 | SOT-323-3 |
峰值直流集电极电流 | 500 mA | 最大工作温度 | + 150 C |
封装 | Reel | 最小工作温度 | - 55 C |
工厂包装数量 | 3000 |
【Diodes Inc.】DDTD114GC-7,Transistors Switching (Resistor Biased) 200MW 10KW
【Diodes Inc.】DDTD114GU-7,Transistors Switching (Resistor Biased) 200MW 10KW
【Diodes Inc.】DDTD114TC-7,Transistors Switching (Resistor Biased) 200MW 10KW
【Diodes Inc.】DDTD114TU-7,Transistors Switching (Resistor Biased) 200MW 10KW